Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent Daniel Haret; Takasumi Tanabe; Eiichi Kuramochi; Masaya Notomi

doi:10.1364/OE.17.021108

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi, Masaya Notomi

Research output: Contribution to journal › Article › peer-review

102 Citations (Scopus)

Abstract

We demonstrate optical bistability in silicon using a high-Q (Q > 10⁵) one-dimensional photonic crystal nanocavity at an extremely low 1.6 μW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ∼ 0.5 μus.

Original language	English
Pages (from-to)	21108-21117
Number of pages	10
Journal	Optics Express
Volume	17
Issue number	23
DOIs	https://doi.org/10.1364/OE.17.021108
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 μW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ∼ 0.5 μus.",

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AU - Notomi, Masaya

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AB - We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 μW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of ∼ 0.5 μus.

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Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Abstract

ASJC Scopus subject areas

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