Fabrication and Characterization of Floating Memory Devices Based on Thiolate-Protected Gold Nanoclusters

Naoyuki Hirata, Minako Sato, Eika Tsunemi, Yoshio Watanabe, Hironori Tsunoyama, Masato Nakaya, Toyoaki Eguchi, Yuichi Negishi, Atsushi Nakajima

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The floating memory properties of thiolate-protected gold (Au:SR) nanoclusters, Au25(SR)18, Au38(SR)24, Au144(SR)60, and Au333(SR)79 (R = C12H25), and Au colloids were investigated using four-probe measurements in vacuum. Uniform and monolayer films of Au:SR nanoclusters or Au colloids were formed as floating memory layers on p-type Si substrates by Langmuir-Blodgett method. The fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using Au dot (∼40 nm thick) as the anode electrode, the capacitance-voltage (C-V) measurements were performed using the Au and Cu plate electrodes as contact points for the two probes. Clockwise hysteresis curves originating from the Au:SR nanoclusters or Au colloids were observed, and the hysteresis width was dependent on the size of the Au:SR nanoclusters and the sample temperature. In particular, for the Au38(SR)24 nanocluster, multiple phases were observed in the C-V curve, implying their application in multivalued memory devices.

Original languageEnglish
Pages (from-to)10638-10644
Number of pages7
JournalJournal of Physical Chemistry C
Issue number20
Publication statusPublished - 2017 May 25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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