Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique

Toshikazu Mukaiyama, Ken Ichi Saito, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A novel fabrication process of gate-all-around (GAA) MOSFETs using an anisotropic etching technique has been proposed. In this technology, the channel width of the GAA device is not limited by the lithography resolution and the density of the wire channel is doubled. The two-dimensional device simulation shows much better short channel immunity of GAA devices than that of single gate and double gate SOI MOSFETs. The simulation also shows that the new GAA devices we have proposed have higher current drivability than the conventional GAA and single gate SOI devices.

Original languageEnglish
Pages (from-to)1623-1626
Number of pages4
JournalSolid-State Electronics
Issue number7-8
Publication statusPublished - 1998 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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