Fabrication of germanium nanodisk array by neutral beam etching with protein as etching mask

Takuya Fujii, Takeru Okada, Taiga Isoda, Mohd Erman Syazwan, Mohamed Tahar Chentir, Kohei M. Itoh, Ichiro Yamashita, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A uniform 10 nm diameter Ge two-dimensional (2D) nanodisk array structure was fabricated using iron oxide cores in a 2D closed-packed array of cage shaped proteins, ferritins, as an etching mask. Thin Ge layer on Si substrate was protected by a-Si capping layer and etched, which eliminated an uncontrollable factor of Ge native oxide. The density of Ge nanodisks was as high as 5.8 × 1011cm−2, and the center-to-center distance was estimated to be 14 nm. It was demonstrated that a quantum confinement effect can be obtained with our fabricated Ge nanodisk array by controlling the nanodisk thickness. The obtained high density Ge nanodisk is promising for Ge/Si quantum dot intermediate band solar cells and other photonics devices.

Original languageEnglish
Article number021801
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Issue number2
Publication statusPublished - 2017 Mar 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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