TY - JOUR
T1 - Fabrication of highly (1 1 1)-oriented Cu2O films on glass substrates by repeated chemical bath deposition
AU - Tonagi, Daichi
AU - Hagiwara, Manabu
AU - Fujihara, Shinobu
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/12/1
Y1 - 2020/12/1
N2 - In this study, we fabricated Cu2O films on bare glass substrates by a chemical bath deposition technique, which consists of a seeding process and a subsequent film-growth process. Dense (1 1 1)-oriented Cu2O films were formed in an aqueous solution of copper (II) sulfate containing L-ascorbate and citrate ions at a low temperature of 80 °C. The film thickness and (1 1 1)-orientation degree (Lotgering factor) were both monotonically increased by simply repeating the film-growth process. As a result, a Cu2O film with a high (1 1 1)-orientation degree of 0.83 and a large thickness 1440 nm was obtained. Detailed chemical and structural characterizations suggested that as-deposited Cu2O films contained citrate ions and metallic Cu as impurities. We also found that a heat treatment at 500 °C under nitrogen flow was effective to remove these impurities.
AB - In this study, we fabricated Cu2O films on bare glass substrates by a chemical bath deposition technique, which consists of a seeding process and a subsequent film-growth process. Dense (1 1 1)-oriented Cu2O films were formed in an aqueous solution of copper (II) sulfate containing L-ascorbate and citrate ions at a low temperature of 80 °C. The film thickness and (1 1 1)-orientation degree (Lotgering factor) were both monotonically increased by simply repeating the film-growth process. As a result, a Cu2O film with a high (1 1 1)-orientation degree of 0.83 and a large thickness 1440 nm was obtained. Detailed chemical and structural characterizations suggested that as-deposited Cu2O films contained citrate ions and metallic Cu as impurities. We also found that a heat treatment at 500 °C under nitrogen flow was effective to remove these impurities.
KW - A3. Chemical bath deposition
KW - A3. Growth from solutions
KW - B1. Oxides
KW - B2. Semiconducting materials
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U2 - 10.1016/j.jcrysgro.2020.125920
DO - 10.1016/j.jcrysgro.2020.125920
M3 - Article
AN - SCOPUS:85092731456
SN - 0022-0248
VL - 551
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125920
ER -