TY - JOUR
T1 - Fabrication of micro sloping structures of SU-8 by substrate penetration lithography
AU - Onishi, J.
AU - Makabe, K.
AU - Matsumoto, Y.
N1 - Funding Information:
This research has been supported in part by a grant by the Research Program on Collaborative Development of Innovative Seeds by JST (Japan Science and Technology Agency).
PY - 2008/10
Y1 - 2008/10
N2 - In this paper, three-dimensional (3D) micro sloping structures were fabricated by ordinary mask pattern and diffraction phenomenon. Especially, we fabricated the structures with SU-8 negative photoresist and substrate penetration lithography. In this method, exposure is performed arranging in order of a mask, a substrate and the SU-8 resist. There is a gap that is equal to the thickness of the substrate between resist and mask. In narrow slit of mask, resist is less exposed than usual because of Fraunhofer diffraction. The amount of exposure depends on slit width so that the height of SU-8 resist can be controlled. A 173 μm height of structure was obtained in the case of 27 μm width slit and 24.2 μm height of structure was obtained in the case of 7.4 μm width slit. By using this method, high aspect ratio 3D SU-8 structures with smooth sloping were fabricated in the length of 100-300 μm and in the height of 50-200 μm with rectangular triangle mask pattern. In the same way, there is influence of Fresnel diffraction on edge of aperture so that micro taper structures were fabricated. A lot of taper structures were fabricated by the method to make the surface repellency. The contact angle was achieved more than 160° in this study.
AB - In this paper, three-dimensional (3D) micro sloping structures were fabricated by ordinary mask pattern and diffraction phenomenon. Especially, we fabricated the structures with SU-8 negative photoresist and substrate penetration lithography. In this method, exposure is performed arranging in order of a mask, a substrate and the SU-8 resist. There is a gap that is equal to the thickness of the substrate between resist and mask. In narrow slit of mask, resist is less exposed than usual because of Fraunhofer diffraction. The amount of exposure depends on slit width so that the height of SU-8 resist can be controlled. A 173 μm height of structure was obtained in the case of 27 μm width slit and 24.2 μm height of structure was obtained in the case of 7.4 μm width slit. By using this method, high aspect ratio 3D SU-8 structures with smooth sloping were fabricated in the length of 100-300 μm and in the height of 50-200 μm with rectangular triangle mask pattern. In the same way, there is influence of Fresnel diffraction on edge of aperture so that micro taper structures were fabricated. A lot of taper structures were fabricated by the method to make the surface repellency. The contact angle was achieved more than 160° in this study.
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U2 - 10.1007/s00542-008-0598-z
DO - 10.1007/s00542-008-0598-z
M3 - Article
AN - SCOPUS:49949086896
SN - 0946-7076
VL - 14
SP - 1305
EP - 1310
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 9-11
ER -