Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Takasumi Tanabe; Katsuhiko Nishiguchi; Akihiko Shinya; Eiichi Kuramochi; Hiroshi Inokawa; Masaya Notomi; Koji Yamada; Tai Tsuchizawa; Toshifumi Watanabe; Hiroshi Fukuda; Hiroyuki Shinojima; Seiichi Itabashi

doi:10.1063/1.2431767

Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Takasumi Tanabe, Katsuhiko Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, Hiroshi Inokawa, Masaya Notomi, Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroshi Fukuda, Hiroyuki Shinojima, Seiichi Itabashi

Research output: Contribution to journal › Article › peer-review

161 Citations (Scopus)

Abstract

On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).

Original language	English
Article number	031115
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2431767
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2431767

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@article{6964671c853643bf837e8e55f1d5c7dc,

title = "Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities",

abstract = "On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).",

author = "Takasumi Tanabe and Katsuhiko Nishiguchi and Akihiko Shinya and Eiichi Kuramochi and Hiroshi Inokawa and Masaya Notomi and Koji Yamada and Tai Tsuchizawa and Toshifumi Watanabe and Hiroshi Fukuda and Hiroyuki Shinojima and Seiichi Itabashi",

note = "Funding Information: Part of this work was supported by the Strategic Information and Communications R&D Promotion Programme (SCOPE) (No. 051403002) of the Ministry of Internal Affairs and Communications, Japan, and Grant-in-Aid for Scientific Research (No. 18760262) of the Ministry of Education, Sports, Culture, Science and Technology, Japan.",

year = "2007",

doi = "10.1063/1.2431767",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

AU - Tanabe, Takasumi

AU - Nishiguchi, Katsuhiko

AU - Shinya, Akihiko

AU - Kuramochi, Eiichi

AU - Inokawa, Hiroshi

AU - Notomi, Masaya

AU - Yamada, Koji

AU - Tsuchizawa, Tai

AU - Watanabe, Toshifumi

AU - Fukuda, Hiroshi

AU - Shinojima, Hiroyuki

AU - Itabashi, Seiichi

N1 - Funding Information: Part of this work was supported by the Strategic Information and Communications R&D Promotion Programme (SCOPE) (No. 051403002) of the Ministry of Internal Affairs and Communications, Japan, and Grant-in-Aid for Scientific Research (No. 18760262) of the Ministry of Education, Sports, Culture, Science and Technology, Japan.

PY - 2007

Y1 - 2007

N2 - On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).

AB - On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides is described. A high dose of Ar+ is introduced, and annealing is used to recrystallize the silicon and thus create dislocation loops at the center of the PhC slab. Dislocation loops enable the fast recombination of the carriers, which allows a fast switching recovery time for PhC switches. The switching window (∼70 ps) is three times smaller than that without ion implantation, while the required operating energy remains almost the same (<100 fJ).

UR - http://www.scopus.com/inward/record.url?scp=33846414299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846414299&partnerID=8YFLogxK

U2 - 10.1063/1.2431767

DO - 10.1063/1.2431767

M3 - Article

AN - SCOPUS:33846414299

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031115

ER -

Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities

Abstract

ASJC Scopus subject areas

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