Film thickness determining method of the silicon isotope superlattices by SIMS

Akio Takano, Yasuo Shimizu, Kohei M. Itoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer.

Original languageEnglish
Pages (from-to)1430-1432
Number of pages3
JournalApplied Surface Science
Issue number4
Publication statusPublished - 2008 Dec 15


  • Depth profile
  • Isotope
  • MRI
  • SIMS
  • Superlattices

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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