First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

Hiroki Kishi; Miki Miyazawa; Naoki Matsushima; Jun Yamauchi

doi:10.1063/1.4865641

First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

Hiroki Kishi, Miki Miyazawa, Naoki Matsushima, Jun Yamauchi

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.

Original language	English
Pages (from-to)	226-229
Number of pages	4
Journal	AIP Conference Proceedings
Volume	1583
DOIs	https://doi.org/10.1063/1.4865641
Publication status	Published - 2014
Event	2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China Duration: 2014 Aug 18 → 2014 Aug 22

Keywords

As
Si
X-ray photoelectron spectroscopy
XPS
defect
first-principles calculation

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4865641

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title = "First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal",

abstract = "We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.",

keywords = "As, Si, X-ray photoelectron spectroscopy, XPS, defect, first-principles calculation",

author = "Hiroki Kishi and Miki Miyazawa and Naoki Matsushima and Jun Yamauchi",

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doi = "10.1063/1.4865641",

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T1 - First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

AU - Kishi, Hiroki

AU - Miyazawa, Miki

AU - Matsushima, Naoki

AU - Yamauchi, Jun

PY - 2014

Y1 - 2014

N2 - We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.

AB - We investigate the X-ray photoelectron spectroscopy (XPS) binding energies of As 3d in Si for various defects in neutral and charged states by first-principles calculation. It is found that the complexes of a substitutional As and a vacancy in charged and neutral states explain the experimentally observed unknown peak very well.

KW - As

KW - Si

KW - X-ray photoelectron spectroscopy

KW - XPS

KW - defect

KW - first-principles calculation

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U2 - 10.1063/1.4865641

DO - 10.1063/1.4865641

M3 - Conference article

AN - SCOPUS:85063851374

SN - 0094-243X

VL - 1583

SP - 226

EP - 229

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

T2 - 2014 IEEE International Conference on Automation Science and Engineering, CASE 2014

Y2 - 18 August 2014 through 22 August 2014

ER -

First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal

Abstract

Keywords

ASJC Scopus subject areas

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