Abstract
Total energies of various reconstructed configurations of cubic boron nitride (001) surfaces are studied systematically by the local density functional approach with ultrasoft pseudopotentials. Stable phases as a function of nitrogen chemical potential are predicted theoretically. Furthermore, we examine the validity of the electron counting rule, which plays an important role in the GaAs study, and obtain the supplemental factors to determine stable surface structures. The difference between cBN and GaAs surfaces is also discussed.
Original language | English |
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Pages (from-to) | L1037-L1041 |
Journal | Surface Science |
Volume | 341 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1995 Nov 10 |
Externally published | Yes |
Keywords
- Boron nitride
- Density functional calculations
- Semiconducting surfaces
- Surface defects
- Surface energy
- Surface relaxation and reconstruction
- Surface structure
- Surface thermodynamics
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry