Flat dielectric properties of capacitor (1 - x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 by controlled concentration gradient

Jong Gab Baek; Kenjiro Gomi; Tetsuhiko Isobe; Mamoru Senna

doi:10.1016/s0921-5107(97)00107-4

Flat dielectric properties of capacitor (1 - x)Pb(Mg_1/3Nb_2/3)O₃ - xPbTiO₃ by controlled concentration gradient

Jong Gab Baek, Kenjiro Gomi, Tetsuhiko Isobe, Mamoru Senna

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Physical and chemical bases of ferroelectrics with the controlled multilayers are studied to design a capacitor with the high and flat dielectric constant. Each component, (1 - x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (x = 0, 0.1 and 0.2), is compounded in parallel at the stage of a green compact and sintered at 1200°C for 2 h. The ceramics exhibits the flat dielectric curve at temperatures between - 10 and 100°C with the dielectric constant, 9 × 10³. The flat dielectric curve is attributed to the existence of the reaction layer formed during sintering between the parallel segments with different x.

Original language	English
Pages (from-to)	46-52
Number of pages	7
Journal	Materials Science and Engineering B
Volume	49
Issue number	1
DOIs	https://doi.org/10.1016/s0921-5107(97)00107-4
Publication status	Published - 1997 Sept 5

Keywords

(1 - x)Pb(MgNb)O-xPbTiO
Ferroelectrics
Flat dielectric curve
Multilayer
Reaction layer

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/s0921-5107(97)00107-4

Cite this

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title = "Flat dielectric properties of capacitor (1 - x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 by controlled concentration gradient",

abstract = "Physical and chemical bases of ferroelectrics with the controlled multilayers are studied to design a capacitor with the high and flat dielectric constant. Each component, (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x = 0, 0.1 and 0.2), is compounded in parallel at the stage of a green compact and sintered at 1200°C for 2 h. The ceramics exhibits the flat dielectric curve at temperatures between - 10 and 100°C with the dielectric constant, 9 × 103. The flat dielectric curve is attributed to the existence of the reaction layer formed during sintering between the parallel segments with different x.",

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T1 - Flat dielectric properties of capacitor (1 - x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 by controlled concentration gradient

AU - Baek, Jong Gab

AU - Gomi, Kenjiro

AU - Isobe, Tetsuhiko

AU - Senna, Mamoru

PY - 1997/9/5

Y1 - 1997/9/5

N2 - Physical and chemical bases of ferroelectrics with the controlled multilayers are studied to design a capacitor with the high and flat dielectric constant. Each component, (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x = 0, 0.1 and 0.2), is compounded in parallel at the stage of a green compact and sintered at 1200°C for 2 h. The ceramics exhibits the flat dielectric curve at temperatures between - 10 and 100°C with the dielectric constant, 9 × 103. The flat dielectric curve is attributed to the existence of the reaction layer formed during sintering between the parallel segments with different x.

AB - Physical and chemical bases of ferroelectrics with the controlled multilayers are studied to design a capacitor with the high and flat dielectric constant. Each component, (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x = 0, 0.1 and 0.2), is compounded in parallel at the stage of a green compact and sintered at 1200°C for 2 h. The ceramics exhibits the flat dielectric curve at temperatures between - 10 and 100°C with the dielectric constant, 9 × 103. The flat dielectric curve is attributed to the existence of the reaction layer formed during sintering between the parallel segments with different x.

KW - (1 - x)Pb(MgNb)O-xPbTiO

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KW - Flat dielectric curve

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KW - Reaction layer

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