Formation of shallow energy levels in Mn+ implanted GaAs with extremely low background impurity concentration

Honglie Shen; Yunosuke Makita; Akimasa Yamada; Shigeru Niki; Tsutomu Iida; Hajime Shibata; Paul Fons; Akira Obara

Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration

Honglie Shen, Yunosuke Makita, Akimasa Yamada, Shigeru Niki, Tsutomu Iida, Hajime Shibata, Paul Fons, Akira Obara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×10²⁰cm^-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)₂ are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×10¹⁹cm^-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)₂ indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.

Original language	English
Title of host publication	Materials Synthesis and Processing Using Ion Beams
Editors	Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Publisher	Publ by Materials Research Society
Pages	343-348
Number of pages	6
ISBN (Print)	1558992154
Publication status	Published - 1994 Jan 1
Externally published	Yes
Event	Proceedings of the MRS 1993 Fall Meeting - Boston, MA, USA Duration: 1993 Nov 29 → 1993 Dec 3

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	316
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the MRS 1993 Fall Meeting
City	Boston, MA, USA
Period	93/11/29 → 93/12/3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Shen, H., Makita, Y., Yamada, A., Niki, S., Iida, T., Shibata, H., Fons, P., & Obara, A. (1994). Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 343-348). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.

Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration. / Shen, Honglie; Makita, Yunosuke; Yamada, Akimasa et al.
Materials Synthesis and Processing Using Ion Beams. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Publ by Materials Research Society, 1994. p. 343-348 (Materials Research Society Symposium Proceedings; Vol. 316).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shen, H, Makita, Y, Yamada, A, Niki, S, Iida, T, Shibata, H, Fons, P & Obara, A 1994, Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Synthesis and Processing Using Ion Beams. Materials Research Society Symposium Proceedings, vol. 316, Publ by Materials Research Society, pp. 343-348, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 93/11/29.

Shen H, Makita Y, Yamada A, Niki S, Iida T, Shibata H et al. Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration. In Garito AF, Jen AK-Y, Lee CY-C, Dalton LR, editors, Materials Synthesis and Processing Using Ion Beams. Publ by Materials Research Society. 1994. p. 343-348. (Materials Research Society Symposium Proceedings).

Shen, Honglie ; Makita, Yunosuke ; Yamada, Akimasa et al. / Formation of shallow energy levels in Mn⁺ implanted GaAs with extremely low background impurity concentration. Materials Synthesis and Processing Using Ion Beams. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Publ by Materials Research Society, 1994. pp. 343-348 (Materials Research Society Symposium Proceedings).

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abstract = "Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×1019cm-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.",

author = "Honglie Shen and Yunosuke Makita and Akimasa Yamada and Shigeru Niki and Tsutomu Iida and Hajime Shibata and Paul Fons and Akira Obara",

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AU - Shibata, Hajime

AU - Fons, Paul

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N2 - Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×1019cm-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.

AB - Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), 'G', 'G'' 'H' and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at approx.880nm. With increasing manganese concentration to 1×1019cm-3, 'G' exhibits no energy shift, suggesting that 'G' is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), 'G' and 'G' present no energy shift with increasing excitation intensity, while 'H' and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. 'G' and (Mn°, X) are found to hold similar radiative origin which is different from 'G'. Temperature dependence measurement reveals that emission 'G has a thermal activation energy of 5.4 meV.

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