Frequency dependence of magneto-impedance in spin tunneling junction

Kazuo Shiiki; Hideo Kaiju; Shigeo Fujita; Takeshi Morozumi

doi:10.1109/INTMAG.2002.1001176

Frequency dependence of magneto-impedance in spin tunneling junction

Kazuo Shiiki, Hideo Kaiju, Shigeo Fujita, Takeshi Morozumi

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spin tunneling junctions (STJ) have potential applications in the next generation of magnetic recording read heads due to the large magnetoresistance ratio. The frequency dependence of the impedance of the tunneling junction is studied and the feasibility of this application is discussed. The tunneling junction, Al/Al₂O₃/Al, and coercive differential STJ, Co/Al₂O₃/Co, were fabricated onto glass substrates by ion-beam mask sputtering. The impedance was measured using a vector impedance meter in the frequency range 0.1 to 100 MHz. The results indicate that the change in the imaginary part of the magnetoimpedance must be detected in order to utilize the STJ, particularly in the high-frequency region.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001176
Publication status	Published - 2002 Jan 1
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	02/4/28 → 02/5/2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2002.1001176

Cite this

Shiiki, K., Kaiju, H., Fujita, S., & Morozumi, T. (2002). Frequency dependence of magneto-impedance in spin tunneling junction. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001176 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001176

Frequency dependence of magneto-impedance in spin tunneling junction. / Shiiki, Kazuo; Kaiju, Hideo; Fujita, Shigeo et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1001176 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shiiki, K, Kaiju, H, Fujita, S & Morozumi, T 2002, Frequency dependence of magneto-impedance in spin tunneling junction. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001176, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 02/4/28. https://doi.org/10.1109/INTMAG.2002.1001176

Shiiki K, Kaiju H, Fujita S, Morozumi T. Frequency dependence of magneto-impedance in spin tunneling junction. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1001176. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1001176

Shiiki, Kazuo ; Kaiju, Hideo ; Fujita, Shigeo et al. / Frequency dependence of magneto-impedance in spin tunneling junction. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

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abstract = "Spin tunneling junctions (STJ) have potential applications in the next generation of magnetic recording read heads due to the large magnetoresistance ratio. The frequency dependence of the impedance of the tunneling junction is studied and the feasibility of this application is discussed. The tunneling junction, Al/Al2O3/Al, and coercive differential STJ, Co/Al2O3/Co, were fabricated onto glass substrates by ion-beam mask sputtering. The impedance was measured using a vector impedance meter in the frequency range 0.1 to 100 MHz. The results indicate that the change in the imaginary part of the magnetoimpedance must be detected in order to utilize the STJ, particularly in the high-frequency region.",

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N2 - Spin tunneling junctions (STJ) have potential applications in the next generation of magnetic recording read heads due to the large magnetoresistance ratio. The frequency dependence of the impedance of the tunneling junction is studied and the feasibility of this application is discussed. The tunneling junction, Al/Al2O3/Al, and coercive differential STJ, Co/Al2O3/Co, were fabricated onto glass substrates by ion-beam mask sputtering. The impedance was measured using a vector impedance meter in the frequency range 0.1 to 100 MHz. The results indicate that the change in the imaginary part of the magnetoimpedance must be detected in order to utilize the STJ, particularly in the high-frequency region.

AB - Spin tunneling junctions (STJ) have potential applications in the next generation of magnetic recording read heads due to the large magnetoresistance ratio. The frequency dependence of the impedance of the tunneling junction is studied and the feasibility of this application is discussed. The tunneling junction, Al/Al2O3/Al, and coercive differential STJ, Co/Al2O3/Co, were fabricated onto glass substrates by ion-beam mask sputtering. The impedance was measured using a vector impedance meter in the frequency range 0.1 to 100 MHz. The results indicate that the change in the imaginary part of the magnetoimpedance must be detected in order to utilize the STJ, particularly in the high-frequency region.

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Frequency dependence of magneto-impedance in spin tunneling junction

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