TY - JOUR
T1 - Fundamental investigation of subsurface damage in single crystalline silicon caused by diamond machining
AU - Yan, Jiwang
AU - Asami, Tooru
AU - Harada, Hirofumi
AU - Kuriyagawa, Tsunemoto
N1 - Funding Information:
The authors would like to acknowledge the financial support of the Japan Society for the Promotion of Science (JSPS), Grant-in-Aid for Exploratory Research (project no. 20656023), and the Japan New Energy and Industrial Technology Development Organization (NEDO).
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/10
Y1 - 2009/10
N2 - Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.
AB - Single crystalline silicon was plunge-cut using diamond tools at a low speed. Cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy were used to examine the subsurface structure of the machined sample. The results showed that the thickness of the machining-induced amorphous layer strongly depends on the tool rake angle and depth of cut, and fluctuates synchronously with surface waviness. Dislocation activity was observed below the amorphous layers in all instances, where the dislocation density depended on the cutting conditions. The machining pressure was estimated from the micro-cutting forces, and a subsurface damage model was proposed by considering the phase transformation and dislocation behavior of silicon under high-pressure conditions.
KW - Dislocation
KW - Ductile machining
KW - High pressure
KW - Nano precision cutting
KW - Phase transformation
KW - Single crystal silicon
KW - Subsurface damage
UR - http://www.scopus.com/inward/record.url?scp=67650482275&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67650482275&partnerID=8YFLogxK
U2 - 10.1016/j.precisioneng.2008.10.008
DO - 10.1016/j.precisioneng.2008.10.008
M3 - Article
AN - SCOPUS:67650482275
SN - 0141-6359
VL - 33
SP - 378
EP - 386
JO - Precision Engineering
JF - Precision Engineering
IS - 4
ER -