A study to investigate the Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films was presented. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600 °C using trifluoroacetic acid. It was observed that the Ga doping increases the cathodoluminescence (CL) intensity of the film, which was attributed to suppression of charge accumulation on the films.
ASJC Scopus subject areas
- General Physics and Astronomy