Abstract
The paper presents a design method of a gallium-nitride high-electron-mobility-transistor (GaN-HEMT) based three level T-type neutral-point-clamped (NPC) inverter using a reverse-conducting mode of the GaN-HEMT. The GaN-HEMT provides high-frequency switching speed and the T-type inverter supports such switching by decreasing conduction loss and heat dissipation. The GaN-HEMT has two operation mode, an enhancement mode and the reverse-conducting mode. In the enhancement mode, resistance on the GaN-HEMT is controlled by gate-source voltage. The reverse-conducting mode appears when gate-source voltage is less than zero. This characteristic provides advantage on design of the T-type NPC inverter. Then, the paper shows that a normally-off inverter is easily attained by using the reverse-conducting mode. Verification of the designed-circuit is conducted by some validation.
| Original language | English |
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| Title of host publication | Proceedings - 2017 IEEE International Symposium on Industrial Electronics, ISIE 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1941-1946 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781509014125 |
| DOIs | |
| Publication status | Published - 2017 Aug 3 |
| Event | 26th IEEE International Symposium on Industrial Electronics, ISIE 2017 - Edinburgh, Scotland, United Kingdom Duration: 2017 Jun 18 → 2017 Jun 21 |
Other
| Other | 26th IEEE International Symposium on Industrial Electronics, ISIE 2017 |
|---|---|
| Country/Territory | United Kingdom |
| City | Edinburgh, Scotland |
| Period | 17/6/18 → 17/6/21 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering