Giant electric double-layer capacitance of heavily boron-doped diamond electrode

Takeshi Watanabe, Tomoko K. Shimizu, Yoshitaka Tateyama, Yousoo Kim, Maki Kawai, Yasuaki Einaga

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82 Citations (Scopus)


The physical and electrochemical properties of boron-doped polycrystalline diamond electrodes, prepared with various B/C ratio, i.e., 0.1%, 0.5% (BDD-A), 1% (BDD-B), and 5% (BDD-C), were investigated. Electrochemical measurements of the heavily boron-doped films (BDD-C) showed giant electric double-layer capacitance and activity which is significantly larger than BDD-A and BDD-B as well as glassy carbon electrodes. However, interestingly, actual boron concentration of BDD-C was observed to be almost the same as that of BDD-B by secondary ion mass spectroscopy (SIMS) and glow discharge optical emission spectroscopy (GDOES) analysis. It is suggested that the large capacitance is due to a few sp2-bonded carbon impurities, which was observed only in BDD-C, although the amount of the sp2-bonded nondiamond species are very small. In the present work, the reason for the interesting electrochemical properties of heavily boron-doped diamond electrodes is discussed. Furthermore, dimensional stability of the electrodes was also confirmed by conducting harsh anodic treatment.

Original languageEnglish
Pages (from-to)772-777
Number of pages6
JournalDiamond and Related Materials
Issue number7-9
Publication statusPublished - 2010 Jul


  • Boron-doped diamond
  • Electric double-layer capacitance
  • Electrochemistry
  • Heavily doping
  • sp-sp composite materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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