Growth and characterization of 28Sin/ 30Sin isotope superlattices

T. Kojima; R. Nebashi; K. M. Itoh; Y. Shiraki

doi:10.1063/1.1613365

Growth and characterization of ²⁸Si_n/ ³⁰Si_n isotope superlattices

T. Kojima, R. Nebashi, K. M. Itoh, Y. Shiraki

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52 Citations (Scopus)

Abstract

A study is performed on characterization and growth of ²⁸Si _n/³⁰Si_n isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.

Original language	English
Pages (from-to)	2318-2320
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1613365
Publication status	Published - 2003 Sept 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1613365

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title = "Growth and characterization of 28Sin/ 30Sin isotope superlattices",

abstract = "A study is performed on characterization and growth of 28Si n/30Sin isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.",

author = "T. Kojima and R. Nebashi and Itoh, {K. M.} and Y. Shiraki",

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AU - Kojima, T.

AU - Nebashi, R.

AU - Itoh, K. M.

AU - Shiraki, Y.

PY - 2003/9/22

Y1 - 2003/9/22

N2 - A study is performed on characterization and growth of 28Si n/30Sin isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.

AB - A study is performed on characterization and growth of 28Si n/30Sin isotope superlattices. The thickness of each isotope layer has been controlled using solid-source molecular beam epitaxy, to produce isotope superlattices. The confinement of phonons within specific isotope layers is shown by Raman spectroscopy.

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JO - Applied Physics Letters

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Growth and characterization of ²⁸Si_n/ ³⁰Si_n isotope superlattices

Abstract

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