Growth and characterization of 70Gen/74Gen isotope superlattices

K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki, E. E. Haller

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)


We report on the molecular beam epitaxial (MBE) growth of 70Gen/74Gen isotope superlattices composed of alternating layers of the stable isotopes 70Ge and 74Ge. Samples prepared in this work have atomic layers n = 4, 8, 16, and 32. All superlattices are p-type having a netimpurity concentration of approximately 1016 cm-3. Zone-folding of optical phonons due to the mass periodicity in the growth direction has been observed clearly for all samples using high resolution Raman spectroscopy. The corresponding phonon mode of each Raman peak has been indexed according to theoretical calculations using the linear-chain model and the planar bond-charge model. The frequency of the Raman peaks found by the experiment agree very well with those of the phonon modes calculated for each superlattice structure. A detailed analysis of the Raman spectra concludes that the degree of interface mixing between 70Ge and 74Ge layers for our typical growth condition is less than two monolayers.

Original languageEnglish
Pages (from-to)405-408
Number of pages4
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sept 121999 Sept 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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