TY - JOUR
T1 - Growth and characterization of 70Gen/74Gen isotope superlattices
AU - Morita, K.
AU - Itoh, K. M.
AU - Muto, J.
AU - Mizoguchi, K.
AU - Usami, N.
AU - Shiraki, Y.
AU - Haller, E. E.
N1 - Funding Information:
We wish to thank M. Nakajima for the fruitful discussion. The work at Keio is supported in part by a Grant-in-Aid for Scientific Research on the Priority Area ‘Spin Controlled Semiconductor Nanostructures’ from the Ministry of Education, Science, Sports, and Culture. The work at Berkeley was supported in part by the Director, Office of Energy Research, Office of Basic Energy Science, Materials Science Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098 and in part by U.S. NSF Grant No. DMR-9732707.
PY - 2000/7/3
Y1 - 2000/7/3
N2 - We report on the molecular beam epitaxial (MBE) growth of 70Gen/74Gen isotope superlattices composed of alternating layers of the stable isotopes 70Ge and 74Ge. Samples prepared in this work have atomic layers n = 4, 8, 16, and 32. All superlattices are p-type having a netimpurity concentration of approximately 1016 cm-3. Zone-folding of optical phonons due to the mass periodicity in the growth direction has been observed clearly for all samples using high resolution Raman spectroscopy. The corresponding phonon mode of each Raman peak has been indexed according to theoretical calculations using the linear-chain model and the planar bond-charge model. The frequency of the Raman peaks found by the experiment agree very well with those of the phonon modes calculated for each superlattice structure. A detailed analysis of the Raman spectra concludes that the degree of interface mixing between 70Ge and 74Ge layers for our typical growth condition is less than two monolayers.
AB - We report on the molecular beam epitaxial (MBE) growth of 70Gen/74Gen isotope superlattices composed of alternating layers of the stable isotopes 70Ge and 74Ge. Samples prepared in this work have atomic layers n = 4, 8, 16, and 32. All superlattices are p-type having a netimpurity concentration of approximately 1016 cm-3. Zone-folding of optical phonons due to the mass periodicity in the growth direction has been observed clearly for all samples using high resolution Raman spectroscopy. The corresponding phonon mode of each Raman peak has been indexed according to theoretical calculations using the linear-chain model and the planar bond-charge model. The frequency of the Raman peaks found by the experiment agree very well with those of the phonon modes calculated for each superlattice structure. A detailed analysis of the Raman spectra concludes that the degree of interface mixing between 70Ge and 74Ge layers for our typical growth condition is less than two monolayers.
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U2 - 10.1016/S0040-6090(00)00901-9
DO - 10.1016/S0040-6090(00)00901-9
M3 - Conference article
AN - SCOPUS:0034228368
SN - 0040-6090
VL - 369
SP - 405
EP - 408
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)
Y2 - 12 September 1999 through 17 September 1999
ER -