Growth of polycrystalline Cu (In,Ga) Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Shogo Ishizuka; Hajime Shibata; Akimasa Yamada; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki

doi:10.1063/1.2766669

Growth of polycrystalline Cu (In,Ga) Se₂ thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Shogo Ishizuka
, Hajime Shibata
, Akimasa Yamada
, Paul Fons
, Keiichiro Sakurai
, Koji Matsubara
, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

Original language	English
Article number	041902
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2766669
Publication status	Published - 2007
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2766669

Cite this

@article{ec05179ebc384e8cabfed3bcc773a04b,

title = "Growth of polycrystalline Cu (In,Ga) Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices",

abstract = "Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5\%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.",

author = "Shogo Ishizuka and Hajime Shibata and Akimasa Yamada and Paul Fons and Keiichiro Sakurai and Koji Matsubara and Shigeru Niki",

note = "Funding Information: This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO).",

year = "2007",

doi = "10.1063/1.2766669",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

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TY - JOUR

T1 - Growth of polycrystalline Cu (In,Ga) Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

AU - Ishizuka, Shogo

AU - Shibata, Hajime

AU - Yamada, Akimasa

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Matsubara, Koji

AU - Niki, Shigeru

N1 - Funding Information: This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO).

PY - 2007

Y1 - 2007

N2 - Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

AB - Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

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