TY - JOUR
T1 - Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy
AU - Zon,
AU - Phienlumlert, Pakawat
AU - Thainoi, Supachok
AU - Kiravittaya, Suwit
AU - Tandaechanurat, Aniwat
AU - Nuntawong, Noppadon
AU - Sopitpan, Suwat
AU - Yordsri, Visittapong
AU - Thanachayanont, Chanchana
AU - Kanjanachuchai, Songphol
AU - Ratanathammaphan, Somchai
AU - Panyakeow, Somsak
AU - Ota, Yasutomo
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Funding Information:
This study was supported by the Research Chair Grant, the National Science and Technology Development Agency (NSTDA), Thailand (Contract No. FDA-CO-2558-1407-TH), Asian Office of Aerospace Research and Development (AOARD) Grant, co-funded with Office of Naval Research Global (ONRG), under Grant No. FA 2386-16-1-4003, Thailand Research Fund (Contract No. DPG5380002), NANOTEC, NSTDA, Thailand (Contract No. RES_50_016_21_016), and Chulalongkorn University. Ms. Zon acknowledges the support from ASEAN University Network/Southeast Asia Engineering Education Development Network (AUN/SEED-Net) (Contract No. CU-58-051-EN). Mr. Visittapong Yordsri and Dr. Chanchana Thanachayanont thank JEOL Ltd. for the access of Ionslicer-JEOL machine in the course of TEM sample preparation.
Funding Information:
This study was supported by the Research Chair Grant, the National Science and Technology Development Agency (NSTDA), Thailand (Contract No. FDA-CO-2558-1407-TH), Asian Office of Aerospace Research and Development (AOARD) Grant, co-funded with Office of Naval Research Global (ONRG), under Grant No. FA 2386-16-1-4003, Thailand Research Fund (Contract No. DPG5380002), NANOTEC, NSTDA, Thailand (Contract No. RES_50_016_21_016), and Chulalong-korn University. Ms. Zon acknowledges the support from ASEAN University Network/Southeast Asia Engineering Education Development Network (AUN/SEED-Net) (Contract No. CU-58-051-EN). Mr. Visittapong Yordsri and Dr. Chanchana Thanachayanont thank JEOL Ltd. for the access of Ionslicer-JEOL machine in the course of TEM sample preparation.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/1/9
Y1 - 2019/1/9
N2 - Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.
AB - Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.
KW - GaSb/GaAs
KW - Ge substrate
KW - molecular beam epitaxy
KW - quantum dots
UR - https://www.scopus.com/pages/publications/85054573343
UR - https://www.scopus.com/pages/publications/85054573343#tab=citedBy
U2 - 10.1002/pssa.201800499
DO - 10.1002/pssa.201800499
M3 - Article
AN - SCOPUS:85054573343
SN - 1862-6300
VL - 216
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 1
M1 - 1800499
ER -