Hall coefficient and Hc2 in underdoped LaFeAsO 0.95F0.05

Y. Kohama, Y. Kamihara, S. Riggs, F. F. Balakirev, T. Atake, M. Jaime, M. Hirano, H. Hosono

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13 Citations (Scopus)


The electrical resistivity and Hall coefficient of LaFeAsO 0.95F0.05 polycrystalline samples were measured in pulsed magnetic fields up to μ0H=60 T from room temperature to 1.5 K. The resistance of the normal state shows a negative temperature coefficient (dρ/ dT<0) below 70 K for this composition, indicating insulating ground state in underdoped LaFeAsO system in contrast to heavily doped compound. The charge carrier density obtained from Hall effect can be described as constant plus a thermally activated term with an energy gap ΔE=630 K. The upper critical field, Hc2, estimated from resistivity measurements, exceeds 75 T with zero-field Tc=26.3 K, suggesting an unconventional nature for superconductivity.

Original languageEnglish
Article number37005
Issue number3
Publication statusPublished - 2008 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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