Hard- and soft-breakdown modeling in <001> oriented β -Ga2O3Schottky barrier diode

Takaya Sugiura, Nobuhiko Nakano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Gallium oxide (Ga 2 O 3) attracts considerable technological interest because of its high Baliga's figure-of-merit and high breakdown voltages. As the models for the breakdown behavior of n-doped Ga 2 O 3 that consider soft (barrier lowering) and hard (avalanche effect) breakdowns are still lacking, in this study, we model the breakdown operations in <001> oriented Schottky barrier diodes considering both the soft- and hard-breakdown phenomena. The completion of the impact ionization model of β- Ga 2 O 3 in <001> orientation is proposed by determining the hole impact ionization coefficient, thereby reproducing hard breakdown operations. Moreover, a barrier lowering model is determined for reproducing soft breakdown operations. The outcomes of the proposed modeling investigation are expected to be crucial for predicting the reverse-biased operations of β- Ga 2 O 3 in <001> orientation to facilitate further technological development and applications of Ga 2 O 3.

Original languageEnglish
Article number0125609
JournalJournal of Applied Physics
Issue number17
Publication statusPublished - 2022 Nov 7

ASJC Scopus subject areas

  • General Physics and Astronomy


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