Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; As-deposited amorphous, crystalline, and laser-reamorphized

Jan H. Richter; Paul Fons; Alex V. Kolobov; Shigenori Ueda; Hideki Yoshikawa; Yoshiyuki Yamashita; Satoshi Ishimaru; Keisuke Kobayashi; Junji Tominaga

doi:10.1063/1.4865328

Hard x-ray photoelectron spectroscopy study of Ge₂Sb₂Te₅; As-deposited amorphous, crystalline, and laser-reamorphized

Jan H. Richter, Paul Fons, Alex V. Kolobov, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Satoshi Ishimaru, Keisuke Kobayashi, Junji Tominaga

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge₂Sb₂Te₅ using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

Original language	English
Article number	061909
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4865328
Publication status	Published - 2014 Oct 2
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; As-deposited amorphous, crystalline, and laser-reamorphized",

abstract = "We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge2Sb2Te5 using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.",

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AU - Richter, Jan H.

AU - Fons, Paul

AU - Kolobov, Alex V.

AU - Ueda, Shigenori

AU - Yoshikawa, Hideki

AU - Yamashita, Yoshiyuki

AU - Ishimaru, Satoshi

AU - Kobayashi, Keisuke

AU - Tominaga, Junji

PY - 2014/10/2

Y1 - 2014/10/2

N2 - We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge2Sb2Te5 using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

AB - We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge2Sb2Te5 using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

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Hard x-ray photoelectron spectroscopy study of Ge₂Sb₂Te₅; As-deposited amorphous, crystalline, and laser-reamorphized

Abstract

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