TY - JOUR
T1 - Heteroepitaxy and characterization of CuInSe2 on GaAs(001)
AU - Niki, S.
AU - Makita, Y.
AU - Yamada, A.
AU - Hellman, O.
AU - Fons, P. J.
AU - Obara, A.
AU - Okada, Y.
AU - Shioda, R.
AU - Oyanagi, H.
AU - Kurafuji, T.
AU - Chichibu, S.
AU - Nakanishi, H.
PY - 1995
Y1 - 1995
N2 - CuInSe2 (CIS) films with Cu/In ratios of γ = 0.81–1.81 have been grown on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of Ts = 350–550°C. Film properties were found to be substantially different for Cu- and In-rich regions. Cu-rich films were p-type, and streaky reflection high-energy electron diffraction (RHEED) patterns and sharp photoluminescence (PL) emissions were observed, suggesting high quality epitaxial films. In-rich films were highly resistive, and contained a large number of twins formed on {112} planes. A broad and strong PL emission, a donor-acceptor pair emission, was observed, which blue-shifted with increasing excitation power, indicating heavy compensation.
AB - CuInSe2 (CIS) films with Cu/In ratios of γ = 0.81–1.81 have been grown on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of Ts = 350–550°C. Film properties were found to be substantially different for Cu- and In-rich regions. Cu-rich films were p-type, and streaky reflection high-energy electron diffraction (RHEED) patterns and sharp photoluminescence (PL) emissions were observed, suggesting high quality epitaxial films. In-rich films were highly resistive, and contained a large number of twins formed on {112} planes. A broad and strong PL emission, a donor-acceptor pair emission, was observed, which blue-shifted with increasing excitation power, indicating heavy compensation.
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U2 - 10.1016/0022-0248(95)80129-Z
DO - 10.1016/0022-0248(95)80129-Z
M3 - Article
AN - SCOPUS:0029307463
SN - 0022-0248
VL - 150
SP - 1201
EP - 1205
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -