High aspect ratio of near-field nano-lens for deep nano-crater patterning

Ichiro Fujimura, Mitsuhiro Terakawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Enhanced optical field close to nano-dielectric spheres excited by a femtosecond laser enables high-throughput nano-crater patterning. With spheres larger than the incident wavelength, the focused far field is well known in optics to be governed by micro-lens, while the enhanced near field with spheres smaller than or equivalent to the incident wavelength is dominated by the resonant Mie-scattering. The crater fabricated by the near-field nano-lens is much shallower than by the micro-lens. Revealing the largest crater depth relative to the diameter will advance the smart applications for nanotribology, nano-sensors and nano-biomedicine. Here, we study the aspect ratio (the depth profile in the substrate relative to the diameter of the intensity profile on the surface of the near-field intensity distribution in the substrate). It is because the fabricated nano-crater depth is empirically determined by the near-field intensity distribution. A maximal vertical intensity profile is found as a function of refractive index and sphere diameter. The dielectric spheres ranging from 400 to 1000 nm diameter on the Si substrate are studied at 800 nm wavelength. Using a sphere with the smaller refractive indices, the larger aspect ratio is achieved. However, a maximal optical intensity is sacrificed for the high aspect ratio. Largest aspect ratios for the near-field nano-patterning range from 3.0 through 4.2 using available spheres with refractive indices of from 1.4 to 3.0. We also consider the difference of the enhanced optical intensity distribution between the systems consists of a single isolated dielectric sphere on a silicon substrate and that consisting of mono-layered hexagonal dielectric sphere array on a silicon substrate.

Original languageEnglish
Title of host publicationLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII
DOIs
Publication statusPublished - 2012
EventLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII - San Francisco, CA, United States
Duration: 2012 Jan 232012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8243
ISSN (Print)0277-786X

Other

OtherLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVII
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/1/2312/1/26

Keywords

  • Laser ablation
  • Mie-scattering
  • Nano-processing
  • Near-field light

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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