High-frequency precise characterization of intrinsic FinFET channel

Hideo Sakai, Shinichi O'uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

Original languageEnglish
Pages (from-to)752-760
Number of pages9
JournalIEICE Transactions on Electronics
Issue number4
Publication statusPublished - 2012 Apr


  • De-embedding
  • Device modeling
  • FinFET
  • RF
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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