High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser

Kohei Hashimoto, Fumihiko Kannari

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

Original languageEnglish
Pages (from-to)2493-2495
Number of pages3
JournalOptics Letters
Issue number17
Publication statusPublished - 2007 Sept 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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