@inproceedings{0cbab77de8b04400bfefb8628dc17478,
title = "High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser",
abstract = "A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.",
keywords = "AO-Q switch, GaN LD, Pr:LiYF4",
author = "Junichiro Kojou and Yojiro Watanbe and Fumihiko Kannari",
year = "2009",
month = dec,
day = "10",
doi = "10.1109/CLEOPR.2009.5292555",
language = "English",
isbn = "9781424438303",
series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",
booktitle = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics",
note = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 30-08-2009 Through 03-09-2009",
}