High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

Kohei M. Itoh; Jiro Kato; Masafumi Uemura; Alexey K. Kaliteevskii; Oleg N. Godisov; Grigori G. Devyatych; Andrey D. Bulanov; Anatoli V. Gusev; Igor D. Kovalev; Pyotr G. Sennikov; Hans J. Pohl; Nikolai V. Abrosimov; Helge Riemann

doi:10.1143/jjap.42.6248

High Purity Isotopically Enriched ²⁹Si and ³⁰Si Single Crystals: Isotope Separation, Purification, and Growth

Kohei M. Itoh, Jiro Kato, Masafumi Uemura, Alexey K. Kaliteevskii, Oleg N. Godisov, Grigori G. Devyatych, Andrey D. Bulanov, Anatoli V. Gusev, Igor D. Kovalev, Pyotr G. Sennikov, Hans J. Pohl, Nikolai V. Abrosimov, Helge Riemann

President

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

We report the successful isotope separation and bulk single crystal growth of ²⁹Si and ³⁰Si stable isotopes. The isotopic enrichments of the ²⁹Si and ³⁰Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 10¹⁵ cm^-3. Thanks to the result of this work and the ²⁸Si crystals we grew previously, high quality single crystals of every stable Si isotope (²⁸Si, ²⁹Si, and ³⁰Si) have been made available for a wide variety of basic research and industrial applications.

Original language	English
Pages (from-to)	6248-6251
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	10
DOIs	https://doi.org/10.1143/jjap.42.6248
Publication status	Published - 2003 Oct

Keywords

Bulk crystal growth
Hall effect
Isotope
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.6248

Cite this

Itoh, K. M., Kato, J., Uemura, M., Kaliteevskii, A. K., Godisov, O. N., Devyatych, G. G., Bulanov, A. D., Gusev, A. V., Kovalev, I. D., Sennikov, P. G., Pohl, H. J., Abrosimov, N. V., & Riemann, H. (2003). High Purity Isotopically Enriched ²⁹Si and ³⁰Si Single Crystals: Isotope Separation, Purification, and Growth. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(10), 6248-6251. https://doi.org/10.1143/jjap.42.6248

High Purity Isotopically Enriched ²⁹Si and ³⁰Si Single Crystals: Isotope Separation, Purification, and Growth. / Itoh, Kohei M.; Kato, Jiro; Uemura, Masafumi et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 10, 10.2003, p. 6248-6251.

Research output: Contribution to journal › Article › peer-review

Itoh, KM, Kato, J, Uemura, M, Kaliteevskii, AK, Godisov, ON, Devyatych, GG, Bulanov, AD, Gusev, AV, Kovalev, ID, Sennikov, PG, Pohl, HJ, Abrosimov, NV & Riemann, H 2003, 'High Purity Isotopically Enriched ²⁹Si and ³⁰Si Single Crystals: Isotope Separation, Purification, and Growth', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 10, pp. 6248-6251. https://doi.org/10.1143/jjap.42.6248

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abstract = "We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.",

keywords = "Bulk crystal growth, Hall effect, Isotope, Silicon",

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AU - Kaliteevskii, Alexey K.

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AB - We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

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