High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

S. Takahashi, T. Tajiri, K. Watanabe, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.

Original languageEnglish
Pages (from-to)305-307
Number of pages3
JournalElectronics Letters
Issue number5
Publication statusPublished - 2018 Mar 8
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'High-Q nanocavities in semiconductor-based three-dimensional photonic crystals'. Together they form a unique fingerprint.

Cite this