High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

E. Pelucchi, M. Baier, Y. Ducommun, S. Watanabe, E. Kapon

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We report here on the fabrication by organometallic chemical vapour deposition of InxGa1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number2
Publication statusPublished - 2003 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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