High-Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

Research output: Contribution to journalLetterpeer-review

14 Citations (Scopus)


Ge–Sb–Te alloy based phase-change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase-change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.

Original languageEnglish
Article number1900105
JournalPhysica Status Solidi - Rapid Research Letters
Issue number8
Publication statusPublished - 2019 Aug
Externally publishedYes


  • bipolar switching
  • chalcogenide superlattice
  • phase-change memory

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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