Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

M. Tada; T. Sakamoto; Y. Tsuji; N. Banno; Y. Saito; Y. Yabe; S. Ishida; M. Terai; S. Kotsuji; N. Iguchi; M. Aono; H. Hada; N. Kasai

doi:10.1109/IEDM.2009.5424287

Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

M. Tada
, T. Sakamoto
, Y. Tsuji
, N. Banno
, Y. Saito
, Y. Yabe
, S. Ishida
, M. Terai
, S. Kotsuji
, N. Iguchi
, M. Aono
, H. Hada
, N. Kasai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, "NanoBridge", has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 Ω A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus improving the yield, ON/OFF resistance ratio (>10⁶) and cycling endurance (>10³). The highly scalable 4 × 4 crossbar switch composed of NanoBridge integrated in a local Cu interconnect of a standard CMOS is successfully configured without select transistors. The nonvolatile solid-electrolyte, crossbar switch is a promising switch element for low power and low cost reconfigurable logic.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	38.5.1-38.5.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424287
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/12/7 → 09/12/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2009.5424287

Cite this

Tada, M., Sakamoto, T., Tsuji, Y., Banno, N., Saito, Y., Yabe, Y., Ishida, S., Terai, M., Kotsuji, S., Iguchi, N., Aono, M., Hada, H., & Kasai, N. (2009). Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 38.5.1-38.5.4). Article 5424287 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424287

Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic. / Tada, M.; Sakamoto, T.; Tsuji, Y. et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 38.5.1-38.5.4 5424287 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tada, M, Sakamoto, T, Tsuji, Y, Banno, N, Saito, Y, Yabe, Y, Ishida, S, Terai, M, Kotsuji, S, Iguchi, N, Aono, M, Hada, H & Kasai, N 2009, Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424287, Technical Digest - International Electron Devices Meeting, IEDM, pp. 38.5.1-38.5.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424287

Tada M, Sakamoto T, Tsuji Y, Banno N, Saito Y, Yabe Y et al. Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 38.5.1-38.5.4. 5424287. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424287

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title = "Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic",

abstract = "A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, {"}NanoBridge{"}, has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 Ω A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus improving the yield, ON/OFF resistance ratio (>106) and cycling endurance (>103). The highly scalable 4 {\texttimes} 4 crossbar switch composed of NanoBridge integrated in a local Cu interconnect of a standard CMOS is successfully configured without select transistors. The nonvolatile solid-electrolyte, crossbar switch is a promising switch element for low power and low cost reconfigurable logic.",

author = "M. Tada and T. Sakamoto and Y. Tsuji and N. Banno and Y. Saito and Y. Yabe and S. Ishida and M. Terai and S. Kotsuji and N. Iguchi and M. Aono and H. Hada and N. Kasai",

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AU - Banno, N.

AU - Saito, Y.

AU - Yabe, Y.

AU - Ishida, S.

AU - Terai, M.

AU - Kotsuji, S.

AU - Iguchi, N.

AU - Aono, M.

AU - Hada, H.

AU - Kasai, N.

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AB - A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, "NanoBridge", has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 Ω A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus improving the yield, ON/OFF resistance ratio (>106) and cycling endurance (>103). The highly scalable 4 × 4 crossbar switch composed of NanoBridge integrated in a local Cu interconnect of a standard CMOS is successfully configured without select transistors. The nonvolatile solid-electrolyte, crossbar switch is a promising switch element for low power and low cost reconfigurable logic.

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Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

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