Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

Takehiko Tawara; Tetsu Ito; Takasumi Tanabe; Kouta Tateno; Eiichi Kuramochi; Masaya Notomi; Hidetoshi Nakano

doi:10.1143/JJAP.45.L917

Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

Takehiko Tawara, Tetsu Ito, Takasumi Tanabe, Kouta Tateno, Eiichi Kuramochi, Masaya Notomi, Hidetoshi Nakano

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl ₂/HI/Xe mixed plasma. We found that the Cl₂/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

Original language	English
Pages (from-to)	L917-L919
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	33-36
DOIs	https://doi.org/10.1143/JJAP.45.L917
Publication status	Published - 2006
Externally published	Yes

Keywords

AlGaAs
Dry etching
HI
Photonic crystal
Selectivity

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.L917

Cite this

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title = "Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma",

abstract = "We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.",

keywords = "AlGaAs, Dry etching, HI, Photonic crystal, Selectivity",

author = "Takehiko Tawara and Tetsu Ito and Takasumi Tanabe and Kouta Tateno and Eiichi Kuramochi and Masaya Notomi and Hidetoshi Nakano",

year = "2006",

doi = "10.1143/JJAP.45.L917",

language = "English",

volume = "45",

pages = "L917--L919",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

AU - Tawara, Takehiko

AU - Ito, Tetsu

AU - Tanabe, Takasumi

AU - Tateno, Kouta

AU - Kuramochi, Eiichi

AU - Notomi, Masaya

AU - Nakano, Hidetoshi

PY - 2006

Y1 - 2006

N2 - We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

AB - We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

KW - AlGaAs

KW - Dry etching

KW - HI

KW - Photonic crystal

KW - Selectivity

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DO - 10.1143/JJAP.45.L917

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SN - 0021-4922

VL - 45

SP - L917-L919

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 33-36

ER -

Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

Abstract

Keywords

ASJC Scopus subject areas

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