Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects

J. Kawahara; K. Shiba; M. Tagami; M. Tada; S. Saito; T. Onodera; K. Kinoshita; M. Hiroi; A. Furuya; K. Kikuta; Y. Hayashi

Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects

J. Kawahara
, K. Shiba
, M. Tagami
, M. Tada
, S. Saito
, T. Onodera
, K. Kinoshita
, M. Hiroi
, A. Furuya
, K. Kikuta
, Y. Hayashi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB) polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400 °C by higher deposition temperature, having high resistance to Cu diffusion at 400 °C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k = 2.7). The p-BCB (k = 2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO₂/Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

Original language	English
Pages (from-to)	20-21
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 2000
Externally published	Yes
Event	2000 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 2000 Jun 13 → 2000 Jun 15

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{43bb41e9d1a34932b98cde26280a1550,

title = "Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects",

abstract = "Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB) polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400 °C by higher deposition temperature, having high resistance to Cu diffusion at 400 °C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k = 2.7). The p-BCB (k = 2.6)/Cu interconnects reveal 46\% delay reduction of CMOS ring oscillator to the conventional SiO2/Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.",

author = "J. Kawahara and K. Shiba and M. Tagami and M. Tada and S. Saito and T. Onodera and K. Kinoshita and M. Hiroi and A. Furuya and K. Kikuta and Y. Hayashi",

year = "2000",

language = "English",

pages = "20--21",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

}

TY - JOUR

T1 - Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects

AU - Kawahara, J.

AU - Shiba, K.

AU - Tagami, M.

AU - Tada, M.

AU - Saito, S.

AU - Onodera, T.

AU - Kinoshita, K.

AU - Hiroi, M.

AU - Furuya, A.

AU - Kikuta, K.

AU - Hayashi, Y.

PY - 2000

Y1 - 2000

N2 - Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB) polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400 °C by higher deposition temperature, having high resistance to Cu diffusion at 400 °C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k = 2.7). The p-BCB (k = 2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO2/Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

AB - Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB) polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400 °C by higher deposition temperature, having high resistance to Cu diffusion at 400 °C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k = 2.7). The p-BCB (k = 2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO2/Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

UR - https://www.scopus.com/pages/publications/0033697430

UR - https://www.scopus.com/pages/publications/0033697430#tab=citedBy

M3 - Conference article

AN - SCOPUS:0033697430

SN - 0743-1562

SP - 20

EP - 21

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

Highly thermal-stable, plasma-polymerized BCB polymer film (k = 2.6) for Cu dual-damascene interconnects

Abstract

ASJC Scopus subject areas

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