Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We demonstrate a highly uniform, dense stack of In0.22Ga0.78As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dotto-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Original languageEnglish
Article number103104
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2014 Sept 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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