Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Yoshihiro Sugiyama; Yoshiaki Nakata; Shunichi Muto; Yuji Awano; Naoki Yokoyama

doi:10.1016/S1386-9477(99)00366-5

Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Yoshihiro Sugiyama, Yoshiaki Nakata, Shunichi Muto, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γ_h) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γ_h larger than 3300. The dependence of writing power, electric field, and temperature on the Γ_h was also investigated using hole burning spectroscopy. The Γ_h broadened not only as the writing power increased over a few W/cm² but also as the applied field increased. The Γ_h showed linear dependence on temperature, and the spectral hole was observed up to 80 K.

Original language	English
Pages (from-to)	503-507
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(99)00366-5
Publication status	Published - 2000 May
Externally published	Yes
Event	MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: 1999 Jul 12 → 1999 Jul 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Hole burning spectroscopy of InAs self-assembled quantum dots for memory application",

abstract = "We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.",

author = "Yoshihiro Sugiyama and Yoshiaki Nakata and Shunichi Muto and Yuji Awano and Naoki Yokoyama",

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doi = "10.1016/S1386-9477(99)00366-5",

language = "English",

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pages = "503--507",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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note = "MSS9: The 9th International Conference on Modulated Semiconductor Structures ; Conference date: 12-07-1999 Through 16-07-1999",

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T1 - Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

AU - Sugiyama, Yoshihiro

AU - Nakata, Yoshiaki

AU - Muto, Shunichi

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 2000/5

Y1 - 2000/5

N2 - We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.

AB - We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.

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DO - 10.1016/S1386-9477(99)00366-5

M3 - Conference article

AN - SCOPUS:0033703174

SN - 1386-9477

VL - 7

SP - 503

EP - 507

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3

T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures

Y2 - 12 July 1999 through 16 July 1999

ER -

Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Abstract

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