Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

Yoshihiro Sugiyama, Yoshiaki Nakata, Shunichi Muto, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.

Original languageEnglish
Pages (from-to)503-507
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3
Publication statusPublished - 2000 May
Externally publishedYes
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Hole burning spectroscopy of InAs self-assembled quantum dots for memory application'. Together they form a unique fingerprint.

Cite this