Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

Kyozaburo Takeda; Nobuo Matsumoto; Akihito Taguchi; Hiroyuki Taki; Eiji Ohta; Makoto Sakata

doi:10.1103/PhysRevB.32.1101

Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

Kyozaburo Takeda, Nobuo Matsumoto, Akihito Taguchi, Hiroyuki Taki, Eiji Ohta, Makoto Sakata

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

Original language	English
Pages (from-to)	1101-1111
Number of pages	11
Journal	Physical Review B
Volume	32
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.32.1101
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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abstract = "With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.",

author = "Kyozaburo Takeda and Nobuo Matsumoto and Akihito Taguchi and Hiroyuki Taki and Eiji Ohta and Makoto Sakata",

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T1 - Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

AU - Takeda, Kyozaburo

AU - Matsumoto, Nobuo

AU - Taguchi, Akihito

AU - Taki, Hiroyuki

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1985

Y1 - 1985

N2 - With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

AB - With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rodes difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

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Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

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