Hybrid integration of smart pixels by using polyimide bonding: Demonstration of a GaAs p-i-n photodiode/CMOS receiver

Tatsushi Nakahara; Hiroyuki Tsuda; Kouta Tateno; Shinji Matsuo; Takashi Kurokawa

doi:10.1109/2944.778287

Hybrid integration of smart pixels by using polyimide bonding: Demonstration of a GaAs p-i-n photodiode/CMOS receiver

Tatsushi Nakahara, Hiroyuki Tsuda, Kouta Tateno, Shinji Matsuo, Takashi Kurokawa

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels. And 16×16 and 2×2 banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated errorfree at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated.

Original language	English
Pages (from-to)	209-216
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/2944.778287
Publication status	Published - 1999 Mar
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/2944.778287

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abstract = "The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels. And 16×16 and 2×2 banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated errorfree at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated.",

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AU - Tateno, Kouta

AU - Matsuo, Shinji

AU - Kurokawa, Takashi

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AB - The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels. And 16×16 and 2×2 banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated errorfree at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated.

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Hybrid integration of smart pixels by using polyimide bonding: Demonstration of a GaAs p-i-n photodiode/CMOS receiver

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