Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

T. Matsuoka; L. S. Vlasenko; M. P. Vlasenko; T. Sekiguchi; K. M. Itoh

doi:10.1063/1.3702785

Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, T. Sekiguchi, K. M. Itoh

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Abstract

A paramagnetic recombination center having an orthorhombic symmetry with g[110]= 2.0095(2), g[001]= 2.0038(2), and g [̄110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P _m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 ¹¹ spins/cm ². The employment of an isotopically enriched ²⁸Si sample with the concentration of ²⁹Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

Original language	English
Article number	152107
Journal	Applied Physics Letters
Volume	100
Issue number	15
DOIs	https://doi.org/10.1063/1.3702785
Publication status	Published - 2012 Apr 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3702785

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title = "Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface",

abstract = "A paramagnetic recombination center having an orthorhombic symmetry with g[110]= 2.0095(2), g[001]= 2.0038(2), and g {\=[}110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 11 spins/cm 2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.",

author = "T. Matsuoka and Vlasenko, {L. S.} and Vlasenko, {M. P.} and T. Sekiguchi and Itoh, {K. M.}",

note = "Funding Information: This work was supported in part by CREST of JST, in part by Grant-in-Aid for Scientific Research and Project for Developing Innovation Systems of MEXT, and in part by Keio G-COE.",

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AU - Matsuoka, T.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Sekiguchi, T.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported in part by CREST of JST, in part by Grant-in-Aid for Scientific Research and Project for Developing Innovation Systems of MEXT, and in part by Keio G-COE.

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N2 - A paramagnetic recombination center having an orthorhombic symmetry with g[110]= 2.0095(2), g[001]= 2.0038(2), and g [̄110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 11 spins/cm 2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

AB - A paramagnetic recombination center having an orthorhombic symmetry with g[110]= 2.0095(2), g[001]= 2.0038(2), and g [̄110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 11 spins/cm 2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

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Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

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