Impact Ionization and Critical Electric Field in 010-Oriented β-Ga2O3Schottky Barrier Diode

Takaya Sugiura; Nobuhiko Nakano

doi:10.1109/TED.2022.3169105

Impact Ionization and Critical Electric Field in 010-Oriented β-Ga₂O₃Schottky Barrier Diode

Takaya Sugiura, Nobuhiko Nakano

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

Original language	English
Pages (from-to)	3068-3072
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	6
DOIs	https://doi.org/10.1109/TED.2022.3169105
Publication status	Published - 2022 Jun 1
Externally published	Yes

Keywords

device simulation
impact ionization
ß-GaO
wide-bandgap semiconductors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2022.3169105

Cite this

@article{415a87525913485894b30141095add07,

title = "Impact Ionization and Critical Electric Field in 010-Oriented β-Ga2O3Schottky Barrier Diode",

abstract = "The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.",

keywords = "device simulation, impact ionization, {\ss}-GaO, wide-bandgap semiconductors",

author = "Takaya Sugiura and Nobuhiko Nakano",

note = "Funding Information: This work was supported by the VLSI Design and Education Center (VDEC), The University of Tokyo, in collaboration with Synopsys, Inc. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

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doi = "10.1109/TED.2022.3169105",

language = "English",

volume = "69",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Impact Ionization and Critical Electric Field in 010-Oriented β-Ga2O3Schottky Barrier Diode

AU - Sugiura, Takaya

AU - Nakano, Nobuhiko

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N2 - The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

AB - The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

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KW - impact ionization

KW - ß-GaO

KW - wide-bandgap semiconductors

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