The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.
- device simulation
- impact ionization
- wide-bandgap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering