Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

K. Nagashio; T. Yamashita; J. Fujita; T. Nishimura; K. Kita; A. Toriumi

doi:10.1109/IEDM.2010.5703421

Impacts of graphene/SiO₂ interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

K. Nagashio, T. Yamashita, J. Fujita, T. Nishimura, K. Kita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

Field effect mobility of the graphene transferred on the SiO₂/Si substrate scatters in various reports and is limited to a typical value of ∼10,000 cm²/Vs. Without understanding the interaction between graphene and SiO₂, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO₂ surface on graphene characteristics.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	23.4.1-23.4.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703421
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703421

Cite this

Nagashio, K., Yamashita, T., Fujita, J., Nishimura, T., Kita, K., & Toriumi, A. (2010). Impacts of graphene/SiO₂ interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 23.4.1-23.4.4). Article 5703421 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703421

Impacts of graphene/SiO₂ interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. / Nagashio, K.; Yamashita, T.; Fujita, J. et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 23.4.1-23.4.4 5703421 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nagashio, K, Yamashita, T, Fujita, J, Nishimura, T, Kita, K & Toriumi, A 2010, Impacts of graphene/SiO₂ interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703421, Technical Digest - International Electron Devices Meeting, IEDM, pp. 23.4.1-23.4.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703421

Nagashio K, Yamashita T, Fujita J, Nishimura T, Kita K, Toriumi A. Impacts of graphene/SiO₂ interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 23.4.1-23.4.4. 5703421. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2010.5703421

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