Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, H. Takasu

Research output: Contribution to journalConference articlepeer-review

54 Citations (Scopus)


We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.

Original languageEnglish
Pages (from-to)287-292
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 2000 Jul
Externally publishedYes
Event3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
Duration: 2000 Mar 62000 Mar 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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