Influence of non-linear effects on very short pMOSFET device performances

Patrice Houlet; Yuji Awano; Naoki Yokoyama

doi:10.1016/S0921-4526(99)00341-5

Influence of non-linear effects on very short pMOSFET device performances

Patrice Houlet, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at V_G = -1.2 V and for all drain biases.

Original language	English
Pages (from-to)	572-574
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00341-5
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 1999 Jul 19 → 1999 Jul 23

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00341-5

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@article{650dbecdde084178827c013510edc494,

title = "Influence of non-linear effects on very short pMOSFET device performances",

abstract = "By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.",

author = "Patrice Houlet and Yuji Awano and Naoki Yokoyama",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-4526(99)00341-5",

language = "English",

volume = "272",

pages = "572--574",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

}

TY - JOUR

T1 - Influence of non-linear effects on very short pMOSFET device performances

AU - Houlet, Patrice

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 1999/12/1

Y1 - 1999/12/1

N2 - By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.

AB - By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.

UR - http://www.scopus.com/inward/record.url?scp=0033324061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033324061&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00341-5

DO - 10.1016/S0921-4526(99)00341-5

M3 - Conference article

AN - SCOPUS:0033324061

SN - 0921-4526

VL - 272

SP - 572

EP - 574

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Influence of non-linear effects on very short pMOSFET device performances

Abstract

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