Abstract
Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p+ and n+ source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nano-scale devices. For the application of SETs, a new method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 119-122 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry