TY - JOUR
T1 - InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition
AU - Sakuma, Yoshiki
AU - Shima, Masashi
AU - Awano, Yuji
AU - Sugiyama, Yoshiro
AU - Futatsugi, Toshiro
AU - Yokoyama, Naoki
AU - Uchida, Kazuhito
AU - Miura, Noboru
AU - Sekiguchi, Takashi
N1 - Funding Information:
This work was performed under the management of FED as a part of MITI R&D program (Quantum Functional Device Project) supported by NEDO.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1999/5
Y1 - 1999/5
N2 - Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.
AB - Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.
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U2 - 10.1007/s11664-999-0097-8
DO - 10.1007/s11664-999-0097-8
M3 - Article
AN - SCOPUS:0032640193
SN - 0361-5235
VL - 28
SP - 466
EP - 480
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 5
ER -