Interface oxygen and heat sensitivity of Cu(In,Ga)Se2 and CuGaSe2 solar cells

Shogo Ishizuka; Paul J. Fons; Akimasa Yamada; Yukiko Kamikawa-Shimizu; Hajime Shibata

doi:10.1063/1.4951670

Interface oxygen and heat sensitivity of Cu(In,Ga)Se₂ and CuGaSe₂ solar cells

Shogo Ishizuka, Paul J. Fons, Akimasa Yamada, Yukiko Kamikawa-Shimizu, Hajime Shibata

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Combined oxygen and heat exposure processes after p-CuGaSe₂/n-CdS junction formation degrade CuGaSe₂ solar cell efficiency, whereas such annealing processes can improve high In content Cu(In,Ga)Se₂ device performance. This result is chiefly attributable to different interface structures consisting of oxygen-sensitive CuGaSe₂ or relatively oxygen-insensitive Cu(In,Ga)Se₂. To reduce CuGaSe₂ interfacial recombination, reduction of the process temperature of the front contact layer deposition process is found to be the key. In this work, fill factor values exceeding 0.7 are reproducibly obtained from CuGaSe₂ solar cells, though such high fill factor values have been very challenging to demonstrate to date using CuGaSe₂ photoabsorber layers.

Original language	English
Article number	203902
Journal	Applied Physics Letters
Volume	108
Issue number	20
DOIs	https://doi.org/10.1063/1.4951670
Publication status	Published - 2016 May 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Interface oxygen and heat sensitivity of Cu(In,Ga)Se2 and CuGaSe2 solar cells",

abstract = "Combined oxygen and heat exposure processes after p-CuGaSe2/n-CdS junction formation degrade CuGaSe2 solar cell efficiency, whereas such annealing processes can improve high In content Cu(In,Ga)Se2 device performance. This result is chiefly attributable to different interface structures consisting of oxygen-sensitive CuGaSe2 or relatively oxygen-insensitive Cu(In,Ga)Se2. To reduce CuGaSe2 interfacial recombination, reduction of the process temperature of the front contact layer deposition process is found to be the key. In this work, fill factor values exceeding 0.7 are reproducibly obtained from CuGaSe2 solar cells, though such high fill factor values have been very challenging to demonstrate to date using CuGaSe2 photoabsorber layers.",

author = "Shogo Ishizuka and Fons, {Paul J.} and Akimasa Yamada and Yukiko Kamikawa-Shimizu and Hajime Shibata",

note = "Funding Information: The authors thank A. Kurokawa, M. Iioka, and H. Higuchi for their help with the experiments and technical support. This work was partly supported by an AIST internal fund, AIST Department of Energy and Environment Innovation Program. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4951670",

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T1 - Interface oxygen and heat sensitivity of Cu(In,Ga)Se2 and CuGaSe2 solar cells

AU - Ishizuka, Shogo

AU - Fons, Paul J.

AU - Yamada, Akimasa

AU - Kamikawa-Shimizu, Yukiko

AU - Shibata, Hajime

N1 - Funding Information: The authors thank A. Kurokawa, M. Iioka, and H. Higuchi for their help with the experiments and technical support. This work was partly supported by an AIST internal fund, AIST Department of Energy and Environment Innovation Program. Publisher Copyright: © 2016 Author(s).

PY - 2016/5/16

Y1 - 2016/5/16

N2 - Combined oxygen and heat exposure processes after p-CuGaSe2/n-CdS junction formation degrade CuGaSe2 solar cell efficiency, whereas such annealing processes can improve high In content Cu(In,Ga)Se2 device performance. This result is chiefly attributable to different interface structures consisting of oxygen-sensitive CuGaSe2 or relatively oxygen-insensitive Cu(In,Ga)Se2. To reduce CuGaSe2 interfacial recombination, reduction of the process temperature of the front contact layer deposition process is found to be the key. In this work, fill factor values exceeding 0.7 are reproducibly obtained from CuGaSe2 solar cells, though such high fill factor values have been very challenging to demonstrate to date using CuGaSe2 photoabsorber layers.

AB - Combined oxygen and heat exposure processes after p-CuGaSe2/n-CdS junction formation degrade CuGaSe2 solar cell efficiency, whereas such annealing processes can improve high In content Cu(In,Ga)Se2 device performance. This result is chiefly attributable to different interface structures consisting of oxygen-sensitive CuGaSe2 or relatively oxygen-insensitive Cu(In,Ga)Se2. To reduce CuGaSe2 interfacial recombination, reduction of the process temperature of the front contact layer deposition process is found to be the key. In this work, fill factor values exceeding 0.7 are reproducibly obtained from CuGaSe2 solar cells, though such high fill factor values have been very challenging to demonstrate to date using CuGaSe2 photoabsorber layers.

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Interface oxygen and heat sensitivity of Cu(In,Ga)Se₂ and CuGaSe₂ solar cells

Abstract

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