Interfacial oxidation of TA-encapsulating Si16 cage superatoms (Ta@Si16) on strontium titanate substrates

Atsushi Nakajima, Masahiro Shibuta, Ryota Takano

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Nanocluster immobilization on an oxide surface is fundamentally important for forming nanocluster-assembled layered materials. We fabricated multilayered superatom films made of tantalum-encapsulating Si16 cage nanocluster (Ta@Si16) on a strontium titanate substrate (SrTiO3; STO) by the soft landing of size-selective Ta@Si16. X-ray photoelectron spectroscopy (XPS) revealed that Ta@Si16 survived at the interfacial oxide layer without oxidizing the central Ta atom, and pure Ta@ Si16 layers were formed successively on the modified Ta@Si16/STO interfacial layer. The Ta@Si16 superatoms in the multilayered Ta@Si16 showed high chemical robustness against O2 exposure, although the topmost Ta@Si16 surface layer, including the central Ta atom, completely oxidized in ambient O2 over several days. XPS depth analysis showed that Ta@Si16 oxide formation was limited only at the topmost single layer, revealing that the middle Ta@Si16 layers sandwiched between the top and bottom were protected by the formation of interfacial oxides.

Original languageEnglish
Pages (from-to)28108-28115
Number of pages8
JournalJournal of Physical Chemistry C
Issue number51
Publication statusPublished - 2020 Dec 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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