Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda, E. Ohta

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

Original languageEnglish
Pages (from-to)2691-2693
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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